CONCENTRATION OF SIMULTANEOUSLY DOPED GALLIUM AND ANTIMONTY IMPURITY ATOMS IN SILICON

Authors

  • Rakhmanov U. M. Teacher of the Department of “Department of Exact Sciences” at the University of Business and Science Tashkent Branch Author

Keywords:

Diffusion, silicon, modeling, film, semiconductor, solar cell, CO2, atmosphere, temperature, energy.

Abstract

The distribution of Ga and Sb atoms in silicon is observed and compound semiconductors are obtained by used to produce modern electronic elements are solar cells. Silicon is the only element on earth used in the production of electronic elements and solar cells.

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Published

2025-12-17

Issue

Vol. 1 No. 03 (2025): WBEL

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

CONCENTRATION OF SIMULTANEOUSLY DOPED GALLIUM AND ANTIMONTY IMPURITY ATOMS IN SILICON. (2025). World Bulletin of Education and Learning, 1(03), 254-261. http://worldbulletin.org/index.php/1/article/view/174