CONCENTRATION OF SIMULTANEOUSLY DOPED GALLIUM AND ANTIMONTY IMPURITY ATOMS IN SILICON. World Bulletin of Education and Learning, [S. l.], v. 1, n. 03, p. 254–261, 2025. Disponível em: http://worldbulletin.org/index.php/1/article/view/174. Acesso em: 29 apr. 2026.